BAS16T116

Obsolete

Rohm Semiconductor

DIODE GEN PURP 80V 100MA SSD3

Search across all available documentation for this part.

Obsolete

Rohm Semiconductor

DIODE GEN PURP 80V 100MA SSD3

Technical Specifications

Parameters and characteristics for this part

Specification	BAS16T116

Capacitance @ Vr, F	3.5 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SSD3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

Part	Grade	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Qualification	Operating Temperature - Junction	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Speed
Rohm Semiconductor BAS16HMFHT116	Automotive	2 pF	SSD3	4 ns	Standard	80 V	Surface Mount	500 nA	215 mA	AEC-Q101	150 °C	SC-59 SOT-23-3 TO-236-3	200 mA 500 ns	1.25 V
Rohm Semiconductor BAS16T116		3.5 pF	SSD3	4 ns	Standard	80 V	Surface Mount	100 nA	100 mA		150 ¯C	SC-59 SOT-23-3 TO-236-3	200 mA		Any Speed

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 100mA Surface Mount SSD3

Technical documentation and resources

No documents available