SI3457DV

Obsolete

ON Semiconductor

SINGLE P-CHANNEL LOGIC LEVEL POWERTRENCH® MOSFET -30V, -4A, 50MΩ

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DocumentsDatasheet Package Drawing-419BL-TSOT23 6-Lead

SI3457DV

Obsolete

ON Semiconductor

SINGLE P-CHANNEL LOGIC LEVEL POWERTRENCH® MOSFET -30V, -4A, 50MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-419BL-TSOT23 6-Lead

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SI3457DV

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.1 nC
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

SI3457DV Series

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case
ON Semiconductor SI3457DV	4.5 V 10 V	3 V	30 V	25 V	Surface Mount	8.1 nC	470 pF	SuperSOT™-6	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	50 mOhm	4 A	SOT-23-6 Thin TSOT-23-6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SI3457DV Series

This P-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process. It has been optimized for battery power management applications.