SI3457DV Series

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mΩ

Catalog

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case
ON Semiconductor SI3457DV	4.5 V 10 V	3 V	30 V	25 V	Surface Mount	8.1 nC	470 pF	SuperSOT™-6	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	50 mOhm	4 A	SOT-23-6 Thin TSOT-23-6

Catalog

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mΩ

Key Features

-4 A, -30 V.

• RDS(ON)= 50 mΩ @ VGS = -10 V

• RDS(ON)= 75 mΩ @ VGS= -4.5 V

• Low gate change

• High performance trench technology for extremelylow RDS(ON)

Description

This P-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process. It has been optimized for battery power management applications.