1N8032-GA

Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 650V 2.5A TO257

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 650V 2.5A TO257

Technical Specifications

Parameters and characteristics for this part

Specification	1N8032-GA

Capacitance @ Vr, F	274 pF
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	250 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-257-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-257
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Speed	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
GeneSiC Semiconductor 1N8032-GA	5 µA	274 pF	No Recovery Time	Through Hole	TO-257-3	650 V	TO-257	0 ns	1.3 V	SiC (Silicon Carbide) Schottky	-55 °C	250 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 2.5A Through Hole TO-257

Technical documentation and resources