1N8032 Series

Catalog

DIODE SIL CARB 650V 2.5A TO257

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Speed	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
GeneSiC Semiconductor 1N8032-GA	5 µA	274 pF	No Recovery Time	Through Hole	TO-257-3	650 V	TO-257	0 ns	1.3 V	SiC (Silicon Carbide) Schottky	-55 °C	250 °C