TK31J60W5,S1VQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO3P

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	TK31J60W5,S1VQ

Current - Continuous Drain (Id) @ 25°C	30.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	88 mOhm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Technology
Toshiba Semiconductor and Storage TK31J60W5,S1VQ	150 °C	10 V	3000 pF	600 V	N-Channel	TO-3P(N)	Through Hole	88 mOhm	105 nC	30 V	3.7 V	30.8 A	SC-65-3 TO-3P-3	230 W	MOSFET (Metal Oxide)

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General part information

N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-3P(N)

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