TK31J60 Series

Catalog

MOSFET N-CH 600V 30.8A TO3P

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Technology
Toshiba Semiconductor and Storage TK31J60W5,S1VQ	150 °C	10 V	3000 pF	600 V	N-Channel	TO-3P(N)	Through Hole	88 mOhm	105 nC	30 V	3.7 V	30.8 A	SC-65-3 TO-3P-3	230 W	MOSFET (Metal Oxide)