SS8050CBU

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ON Semiconductor

TRANS GP BJT NPN 25V 1.5A 1000MW 3-PIN TO-92 BAG

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ON Semiconductor

TRANS GP BJT NPN 25V 1.5A 1000MW 3-PIN TO-92 BAG

Technical Specifications

Parameters and characteristics for this part

Specification	SS8050CBU

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

NPN Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Package / Case	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Mounting Type	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor SS8050BBU	25 V	85	150 °C	100 nA	TO-226-3 TO-92-3	TO-92-3	100 MHz	1 W	Through Hole	NPN	1.5 A	500 mV
ON Semiconductor SS8050CBU	25 V	120	150 °C	100 nA	TO-226-3 TO-92-3	TO-92-3	100 MHz	1 W	Through Hole	NPN	1.5 A	500 mV
ON Semiconductor SS8050DBU	25 V	160	150 °C	100 nA	TO-226-3 TO-92-3	TO-92-3	100 MHz	1 W	Through Hole	NPN	1.5 A	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources