SS8050BBU

Obsolete

ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

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Obsolete

ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	SS8050BBU

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	85
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

NPN Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Package / Case	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Mounting Type	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor SS8050BBU	25 V	85	150 °C	100 nA	TO-226-3 TO-92-3	TO-92-3	100 MHz	1 W	Through Hole	NPN	1.5 A	500 mV
ON Semiconductor SS8050CBU	25 V	120	150 °C	100 nA	TO-226-3 TO-92-3	TO-92-3	100 MHz	1 W	Through Hole	NPN	1.5 A	500 mV
ON Semiconductor SS8050DBU	25 V	160	150 °C	100 nA	TO-226-3 TO-92-3	TO-92-3	100 MHz	1 W	Through Hole	NPN	1.5 A	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources