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10ETF02 - TO-220AC

10ETF02

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 10A TO220AC

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10ETF02 - TO-220AC

10ETF02

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 10A TO220AC

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Technical Specifications

Parameters and characteristics for this part

Specification10ETF02
Current - Average Rectified (Io)10 A
Current - Reverse Leakage @ Vr100 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)145 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If [Max]1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

10ETF02 Series

Diode 200 V 10A Through Hole TO-220AC

Documents

Technical documentation and resources