
VS-10ETF02-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 10A TO220AC
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VS-10ETF02-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 10A TO220AC
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DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-10ETF02-M3 |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 200 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220AC |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 8000 | $ 1.03 | |
Description
General part information
10ETF02 Series
Diode 200 V 10A Through Hole TO-220AC
Documents
Technical documentation and resources