SGH40N60UFDTU

Obsolete

ON Semiconductor

IGBT 600V 40A 160W TO3P

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DocumentsPackage Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED Datasheet +1

SGH40N60UFDTU

Obsolete

ON Semiconductor

IGBT 600V 40A 160W TO3P

Deep-Dive with AI

DocumentsPackage Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED Datasheet +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SGH40N60UFDTU

Current - Collector (Ic) (Max) [Max]	40 A
Gate Charge	97 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	160 W
Reverse Recovery Time (trr)	60 ns
Supplier Device Package	TO-3P
Switching Energy	160 µJ, 200 µJ
Td (on/off) @ 25°C	65 ns, 15 ns
Test Condition	20 A, 300 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

SGH40N60UFD Series

600V, PT IGBT

Part	Gate Charge	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Test Condition	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Mounting Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C
ON Semiconductor SGH40N60UFDTU	97 nC	40 A	600 V	160 µJ 200 µJ	10 Ohm 15 V 20 A 300 V	TO-3P	SC-65-3 TO-3P-3	60 ns	2.6 V	Through Hole	160 W	-55 °C	150 °C	15 ns 65 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SGH40N60UFD Series

ON Semiconductor's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.