SGH40N60UFD Series

600V, PT IGBT

Catalog

600V, PT IGBT

Part	Gate Charge	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Test Condition	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Mounting Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C
ON Semiconductor SGH40N60UFDTU	97 nC	40 A	600 V	160 µJ 200 µJ	10 Ohm 15 V 20 A 300 V	TO-3P	SC-65-3 TO-3P-3	60 ns	2.6 V	Through Hole	160 W	-55 °C	150 °C	15 ns 65 ns

Catalog

600V, PT IGBT

Key Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat)= 2.1 V @ IC= 20A

• High Input Impedance

• CO-PAK, IGBT with FRD : trr= 42ns (typ.)

Description

ON Semiconductor's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.