1N6484HE3/97

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

Technical Specifications

Parameters and characteristics for this part

Specification	1N6484HE3/97

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AB, MELF (Glass)
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-213AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Capacitance @ Vr, F	Technology
Vishay General Semiconductor - Diodes Division 1N6484-E3/96	175 ░C	-65 C	1.1 V	1 A	10 çA	Standard Recovery >500ns	200 mA	Surface Mount	1000 V	DO-213AB MELF (Glass)	DO-213AB	8 pF	Standard
Vishay General Semiconductor - Diodes Division 1N6484-E3/97	175 ░C	-65 C	1.1 V	1 A	10 çA	Standard Recovery >500ns	200 mA	Surface Mount	1000 V	DO-213AB MELF (Glass)	DO-213AB	8 pF	Standard
Vishay General Semiconductor - Diodes Division 1N6484HE3/97	175 ░C	-65 C	1.1 V	1 A	10 çA	Standard Recovery >500ns	200 mA	Surface Mount	1000 V	DO-213AB MELF (Glass)	DO-213AB	8 pF	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 1A Surface Mount DO-213AB

Technical documentation and resources