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1N6484-E3/96 - DO-213AB

1N6484-E3/96

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

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1N6484-E3/96 - DO-213AB

1N6484-E3/96

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N6484-E3/96
Capacitance @ Vr, F8 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr10 çA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-213AB, MELF (Glass)
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-213AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.44
10$ 0.34
100$ 0.21
500$ 0.19
Digi-Reel® 1$ 0.44
10$ 0.34
100$ 0.21
500$ 0.19
Tape & Reel (TR) 1500$ 0.13
3000$ 0.12
7500$ 0.11
10500$ 0.10
37500$ 0.10
75000$ 0.10

Description

General part information

1N6484 Series

Diode 1000 V 1A Surface Mount DO-213AB

Documents

Technical documentation and resources