2N3904TA

Active

ON Semiconductor

200 MA, 40 V NPN GENERAL PURPOSE BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Package Drawing-135AR-TO-92 3 4.83x4.76 Leadformed +1

2N3904TA

Active

ON Semiconductor

200 MA, 40 V NPN GENERAL PURPOSE BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Package Drawing-135AR-TO-92 3 4.83x4.76 Leadformed +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N3904TA

Current - Collector (Ic) (Max) [Max]	200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

2N3904T Series

200 mA, 40 V NPN General Purpose Bipolar Junction Transistor

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor 2N3904RL1	Through Hole	200 mA	NPN	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	40 V	-55 °C	150 °C	300 mV	TO-92	TO-226	300 MHz	100
ON Semiconductor 2N3904NLBU	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904G	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3 Long Body	40 V	-55 °C	150 °C	300 mV	TO-92	TO-226	300 MHz	100
ON Semiconductor 2N3904_D28Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_J61Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_D81Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_J25Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_D27ZS00Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904TA	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_D10Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.19
		10	$ 0.12
		25	$ 0.12
		100	$ 0.06
		250	$ 0.06
		500	$ 0.05
		1000	$ 0.05
		3000	$ 0.04
		6000	$ 0.04
		15000	$ 0.04
Digikey	Cut Tape (CT)	1	$ 0.27
		10	$ 0.16
		100	$ 0.10
		500	$ 0.07
		1000	$ 0.07
	Tape & Box (TB)	2000	$ 0.06
		4000	$ 0.05
		6000	$ 0.05
		10000	$ 0.05
		14000	$ 0.04
		20000	$ 0.04
		50000	$ 0.04
		100000	$ 0.03
		200000	$ 0.03
Newark	Each	1000	$ 0.04
		2500	$ 0.03
		10000	$ 0.03
		25000	$ 0.03
ON Semiconductor	N/A	1	$ 0.03

Description

General part information

2N3904T Series

This 200 mA, 40 V NPN General Purpose Bipolar Junction Transistor can be used as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-135AR-TO-92 3 4.83x4.76 Leadformed

Package Drawing