2N3904_D27ZS00Z

Obsolete

ON Semiconductor

TRANS NPN 40V 0.2A TO92-3

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2N3904_D27ZS00Z

Obsolete

ON Semiconductor

TRANS NPN 40V 0.2A TO92-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N3904_D27ZS00Z

Current - Collector (Ic) (Max) [Max]	200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

2N3904T Series

200 mA, 40 V NPN General Purpose Bipolar Junction Transistor

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor 2N3904RL1	Through Hole	200 mA	NPN	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	40 V	-55 °C	150 °C	300 mV	TO-92	TO-226	300 MHz	100
ON Semiconductor 2N3904NLBU	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904G	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3 Long Body	40 V	-55 °C	150 °C	300 mV	TO-92	TO-226	300 MHz	100
ON Semiconductor 2N3904_D28Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_J61Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_D81Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_J25Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_D27ZS00Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904TA	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100
ON Semiconductor 2N3904_D10Z	Through Hole	200 mA	NPN	625 mW	TO-226-3 TO-92-3	40 V	-55 °C	150 °C	300 mV	TO-92-3		300 MHz	100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N3904T Series

This 200 mA, 40 V NPN General Purpose Bipolar Junction Transistor can be used as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Documents

Technical documentation and resources