G180N06S2

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Goford Semiconductor

MOSFET 2N-CH 60V 8A 8SOP

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Goford Semiconductor

MOSFET 2N-CH 60V 8A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G180N06S2

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	58 nC
Input Capacitance (Ciss) (Max) @ Vds	2330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Goford Semiconductor G180N06S2	8-SOIC	3.9 mm	0.154 in	2 W	60 V	8-SOP	2330 pF	2.4 V	20 mOhm	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	58 nC	8 A	Surface Mount

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