2N5401RLRAG

Obsolete

ON Semiconductor

HIGH CURRENT PNP BIPOLAR TRANSISTOR, TO-92

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2N5401RLRAG

Obsolete

ON Semiconductor

HIGH CURRENT PNP BIPOLAR TRANSISTOR, TO-92

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DocumentsDatasheet Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N5401RLRAG

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

2N5401 Series

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Frequency - Transition	Transistor Type	Supplier Device Package	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor 2N5401RLRAG	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401RL1	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401	600 mA	625 mW	TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401ZL1G	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401NLBU	600 mA	625 mW	TO-226-3 TO-92-3	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	400 MHz	PNP	TO-92-3		500 mV
ON Semiconductor 2N5401RLRM	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401ZL1	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401RLRA	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401YBU	600 mA	625 mW	TO-226-3 TO-92-3		150 V	60 hFE	-55 °C	150 °C	Through Hole	400 MHz	PNP	TO-92-3		500 mV
ON Semiconductor 2N5401_D28Z	600 mA	625 mW	TO-226-3 TO-92-3	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	400 MHz	PNP	TO-92-3		500 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N5401 Series

This PNP Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources