2N5401 Series

Catalog

HIGH CURRENT PNP BIPOLAR TRANSISTOR, TO-92

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Frequency - Transition	Transistor Type	Supplier Device Package	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor 2N5401RLRAG	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401RL1	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401	600 mA	625 mW	TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401ZL1G	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401NLBU	600 mA	625 mW	TO-226-3 TO-92-3	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	400 MHz	PNP	TO-92-3		500 mV
ON Semiconductor 2N5401RLRM	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401ZL1	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401RLRA	600 mA	625 mW	Formed Leads TO-226-3 TO-92-3 Long Body	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	300 MHz	PNP	TO-92	TO-226	500 mV
ON Semiconductor 2N5401YBU	600 mA	625 mW	TO-226-3 TO-92-3		150 V	60 hFE	-55 °C	150 °C	Through Hole	400 MHz	PNP	TO-92-3		500 mV
ON Semiconductor 2N5401_D28Z	600 mA	625 mW	TO-226-3 TO-92-3	50 nA	150 V	60 hFE	-55 °C	150 °C	Through Hole	400 MHz	PNP	TO-92-3		500 mV