71V65603S150PFGI8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 ZBT SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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71V65603S150PFGI8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 36 ZBT SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V65603S150PFGI8

Access Time	3.8 ns
Clock Frequency	150 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization [custom]	36
Memory Organization [custom]	256 K
Memory Size	9 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	100-LQFP
Supplier Device Package	100-TQFP (14x14)
Technology	SRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V65603 Series

3.3V 256K X 36 ZBT Synchronous 3.3V I/O Pipelined SRAM

Part	Memory Size	Memory Type	Access Time	Clock Frequency	Memory Interface	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Organization [custom]	Memory Organization [custom]	Supplier Device Package	Technology	Memory Format	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type
Renesas Electronics Corporation 71V65603S150PFGI8	9 Mbit	Volatile	3.8 ns	150 MHz	Parallel	100-LQFP	3.465 V	3.135 V	36	256 K	100-TQFP (14x14)	SRAM - Synchronous SDR (ZBT)	SRAM	85 °C	-40 °C	Surface Mount
Renesas Electronics Corporation 71V65603S133BGI	9 Mbit	Volatile	4.2 ns	133 MHz	Parallel	119-BGA	3.465 V	3.135 V	36	256 K	119-PBGA (14x22)	SRAM - Synchronous SDR (ZBT)	SRAM	85 °C	-40 °C	Surface Mount
Renesas Electronics Corporation 71V65603S150BQGI8	9 Mbit	Volatile	3.8 ns	150 MHz	Parallel	165-TBGA	3.465 V	3.135 V	36	256 K	165-CABGA (13x15)	SRAM - Synchronous SDR (ZBT)	SRAM	85 °C	-40 °C	Surface Mount
Renesas Electronics Corporation 71V65603S150BQ	9 Mbit	Volatile	3.8 ns	150 MHz	Parallel	165-TBGA	3.465 V	3.135 V	36	256 K	165-CABGA (13x15)	SRAM - Synchronous SDR (ZBT)	SRAM	70 °C	0 °C	Surface Mount
Renesas Electronics Corporation 71V65603S100PFGI8	9 Mbit	Volatile	5 ns	100 MHz	Parallel	100-LQFP	3.465 V	3.135 V	36	256 K	100-TQFP (14x20)	SRAM - Synchronous SDR (ZBT)	SRAM	85 °C	-40 °C	Surface Mount
Renesas Electronics Corporation 71V65603S133BGI8	9 Mbit	Volatile	4.2 ns	133 MHz	Parallel	119-BGA	3.465 V	3.135 V	36	256 K	119-PBGA (14x22)	SRAM - Synchronous SDR (ZBT)	SRAM	85 °C	-40 °C	Surface Mount
Renesas Electronics Corporation 71V65603S133BGGI8	9 Mbit	Volatile	4.2 ns	133 MHz	Parallel	119-BGA	3.465 V	3.135 V	36	256 K	119-PBGA (14x22)	SRAM - Synchronous SDR (ZBT)	SRAM	85 °C	-40 °C	Surface Mount
Renesas Electronics Corporation 71V65603S133BQI	9 Mbit	Volatile	4.2 ns	133 MHz	Parallel	165-TBGA	3.465 V	3.135 V	36	256 K	165-CABGA (13x15)	SRAM - Synchronous SDR (ZBT)	SRAM	85 °C	-40 °C	Surface Mount
Renesas Electronics Corporation 71V65603S100BG	9 Mbit	Volatile	5 ns	100 MHz	Parallel	119-BGA	3.465 V	3.135 V	36	256 K	119-PBGA (14x22)	SRAM - Synchronous SDR (ZBT)	SRAM	70 °C	0 °C	Surface Mount
Renesas Electronics Corporation 71V65603S133BQG	9 Mbit	Volatile	4.2 ns	133 MHz	Parallel	165-TBGA	3.465 V	3.135 V	36	256 K	165-CABGA (13x15)	SRAM - Synchronous SDR (ZBT)	SRAM	70 °C	0 °C	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V65603 Series

The 71V65603 3.3V CMOS SRAM, organized as 256K X 36, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus, it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65603 contains data I/O, address, and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources