RSS090N03FRATB

Active

Rohm Semiconductor

MOSFET, AEC-Q101, N-CH, 30V, SOP

Search across all available documentation for this part.

Active

Rohm Semiconductor

MOSFET, AEC-Q101, N-CH, 30V, SOP

Technical Specifications

Parameters and characteristics for this part

Specification	RSS090N03FRATB

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Rohm Semiconductor RSS090N03FRATB	15 nC	20 V	8-SOIC	3.9 mm	0.154 in	N-Channel	16 mOhm	30 V	8-SOP	1.4 W	2.5 V	MOSFET (Metal Oxide)	4 V	10 V	810 pF	-55 °C	150 °C	9 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 9A (Ta) 1.4W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available