MOSFET, AEC-Q101, N-CH, 30V, SOP
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Power Dissipation (Max) | Vgs(th) (Max) @ Id [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 15 nC | 20 V | 8-SOIC | 3.9 mm | 0.154 in | N-Channel | 16 mOhm | 30 V | 8-SOP | 1.4 W | 2.5 V | MOSFET (Metal Oxide) | 4 V | 10 V | 810 pF | -55 °C | 150 °C | 9 A | Surface Mount |