TK35A08N1,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 80V 35A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 80V 35A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK35A08N1,S4X

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	12.2 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TK35A08N1,S4X	10 V	35 A	MOSFET (Metal Oxide)	TO-220-3 Full Pack	20 V	25 nC	1700 pF	Through Hole	150 °C	12.2 mOhm	TO-220SIS	N-Channel	80 V	4 V

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General part information

N-Channel 80 V 35A (Tc) 30W (Tc) Through Hole TO-220SIS

Technical documentation and resources