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MOSFET N-CH 80V 35A TO220SIS
| Part | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 V | 35 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 20 V | 25 nC | 1700 pF | Through Hole | 150 °C | 12.2 mOhm | TO-220SIS | N-Channel | 80 V | 4 V |