WND10M600XQ

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WeEn Semiconductors Co., Ltd

WND10M600X/TO-220F/STANDARD MARK

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WeEn Semiconductors Co., Ltd

WND10M600X/TO-220F/STANDARD MARK

Technical Specifications

Parameters and characteristics for this part

Specification	WND10M600XQ

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 ¯C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-220F
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	980 mV

Part	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Technology	Speed	Speed	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case
WeEn Semiconductors Co., Ltd WND10P08XQ	TO-220F	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	1.3 V	800 V	10 µA	TO-220-2 Full Pack Isolated Tab
WeEn Semiconductors Co., Ltd WND10M600XQ	TO-220F	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	980 mV	600 V	10 µA	TO-220-2 Full Pack Isolated Tab

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	6000	$ 0.34

General part information

Diode 600 V 10A Through Hole TO-220F

Technical documentation and resources

No documents available