WND10P08XQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 800V 10A TO220F

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 800V 10A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	WND10P08XQ

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction	150 ¯C
Package / Case	TO-220-2 Full Pack, Isolated Tab
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-220F
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Technology	Speed	Speed	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case
WeEn Semiconductors Co., Ltd WND10P08XQ	TO-220F	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	1.3 V	800 V	10 µA	TO-220-2 Full Pack Isolated Tab
WeEn Semiconductors Co., Ltd WND10M600XQ	TO-220F	10 A	Through Hole	Standard	Standard Recovery >500ns	200 mA	150 ¯C	980 mV	600 V	10 µA	TO-220-2 Full Pack Isolated Tab

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General part information

Diode 800 V 10A Through Hole TO-220F

Technical documentation and resources

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