GC02MPS12-220

Obsolete

GeneSiC Semiconductor

DIODE: SCHOTTKY RECTIFYING; SIC; THT; 1.2KV; 2A; TO220-2; TUBE

Search across all available documentation for this part.

Obsolete

GeneSiC Semiconductor

DIODE: SCHOTTKY RECTIFYING; SIC; THT; 1.2KV; 2A; TO220-2; TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	GC02MPS12-220

Capacitance @ Vr, F	127 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Speed	Technology	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
GeneSiC Semiconductor GC02MPS12-220	No Recovery Time	SiC (Silicon Carbide) Schottky	2 µA	0 ns	TO-220-2	127 pF	175 ░C	-55 C	Through Hole	1.8 V	12 A	TO-220-2	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 12A Through Hole TO-220-2

Technical documentation and resources