DIODE: SCHOTTKY RECTIFYING; SIC; THT; 1.2KV; 2A; TO220-2; TUBE
| Part | Speed | Technology | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Package / Case | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | No Recovery Time | SiC (Silicon Carbide) Schottky | 2 µA | 0 ns | TO-220-2 | 127 pF | 175 ░C | -55 C | Through Hole | 1.8 V | 12 A | TO-220-2 | 1.2 kV |