TK100A10N1,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 100A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 100A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK100A10N1,S4X

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	8800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology
Toshiba Semiconductor and Storage TK100A10N1,S4X	N-Channel	20 V	Through Hole	100 V	TO-220SIS	TO-220-3 Full Pack	140 nC	3.8 mOhm	150 °C	8800 pF	45 W	100 A	10 V	MOSFET (Metal Oxide)

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General part information

N-Channel 100 V 100A (Tc) 45W (Tc) Through Hole TO-220SIS

Technical documentation and resources