Beta
⌘K
MOSFET N-CH 100V 100A TO220SIS
| Part | FET Type | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | 20 V | Through Hole | 100 V | TO-220SIS | TO-220-3 Full Pack | 140 nC | 3.8 mOhm | 150 °C | 8800 pF | 45 W | 100 A | 10 V | MOSFET (Metal Oxide) |