TK60S10N1L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 60A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 60A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK60S10N1L,LXHQ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	4320 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	180 W
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Technology
Toshiba Semiconductor and Storage TK60S10N1L,LXHQ	N-Channel	60 nC	180 W	4320 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 A	3.5 V	Surface Mount	20 V	DPAK+	100 V	6 V 10 V	175 °C	MOSFET (Metal Oxide)

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General part information

N-Channel 100 V 60A (Ta) 180W (Tc) Surface Mount DPAK+

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