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MOSFET N-CH 100V 60A DPAK
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Vgs (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | 60 nC | 180 W | 4320 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 60 A | 3.5 V | Surface Mount | 20 V | DPAK+ | 100 V | 6 V 10 V | 175 °C | MOSFET (Metal Oxide) |