2SB1260T100Q

Rohm Semiconductor

TRANS GP BJT PNP 80V 1A 2000MW 4-PIN(3+TAB) MPT T/R

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Rohm Semiconductor

TRANS GP BJT PNP 80V 1A 2000MW 4-PIN(3+TAB) MPT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1260T100Q

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Mounting Type	Package / Case	Frequency - Transition	Operating Temperature	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor 2SB1260T100R	Surface Mount	TO-243AA	100 MHz	150 °C	2 W	400 mV	80 V	PNP	180 hFE	1 A	1 µA
Rohm Semiconductor 2SB1260T100P	Surface Mount	TO-243AA	100 MHz	150 °C	2 W	400 mV	80 V	PNP	82	1 A	1 µA
Rohm Semiconductor 2SB1260T100Q	Surface Mount	TO-243AA	100 MHz	150 °C	2 W	400 mV	80 V	PNP	120	1 A	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 80 V 1 A 100MHz 2 W Surface Mount MPT3

Technical documentation and resources

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