2SB1260T100R

Rohm Semiconductor

TRANS PNP 80V 1A MPT3

Search across all available documentation for this part.

Rohm Semiconductor

TRANS PNP 80V 1A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1260T100R

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Mounting Type	Package / Case	Frequency - Transition	Operating Temperature	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor 2SB1260T100R	Surface Mount	TO-243AA	100 MHz	150 °C	2 W	400 mV	80 V	PNP	180 hFE	1 A	1 µA
Rohm Semiconductor 2SB1260T100P	Surface Mount	TO-243AA	100 MHz	150 °C	2 W	400 mV	80 V	PNP	82	1 A	1 µA
Rohm Semiconductor 2SB1260T100Q	Surface Mount	TO-243AA	100 MHz	150 °C	2 W	400 mV	80 V	PNP	120	1 A	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 80 V 1 A 100MHz 2 W Surface Mount MPT3

Technical documentation and resources

No documents available