2ED2182S06FXUMA1
Active2ED2182S06F IS A 650 V 2.5 A HALF-BRIDGE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER IN A DSO-8 PACKAGE
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2ED2182S06FXUMA1
Active2ED2182S06F IS A 650 V 2.5 A HALF-BRIDGE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER IN A DSO-8 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED2182S06FXUMA1 |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Source, Sink) [custom] | 2.5 A |
| Current - Peak Output (Source, Sink) [custom] | 2.5 A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 650 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH [custom] | 1.1 V |
| Logic Voltage - VIL, VIH [custom] | 1.7 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 1 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 15 ns |
| Rise / Fall Time (Typ) [custom] | 15 ns |
| Supplier Device Package | PG-DSO-8-69 |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.91 | |
| 10 | $ 1.89 | |||
| 25 | $ 1.62 | |||
| 100 | $ 1.32 | |||
| 250 | $ 1.17 | |||
| 500 | $ 1.08 | |||
| 1000 | $ 1.01 | |||
| Digi-Reel® | 1 | $ 2.91 | ||
| 10 | $ 1.89 | |||
| 25 | $ 1.62 | |||
| 100 | $ 1.32 | |||
| 250 | $ 1.17 | |||
| 500 | $ 1.08 | |||
| 1000 | $ 1.01 | |||
| Tape & Reel (TR) | 2500 | $ 0.93 | ||
| 5000 | $ 0.88 | |||
| 7500 | $ 0.85 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.90 | |
| 10 | $ 1.39 | |||
| 25 | $ 1.27 | |||
| 50 | $ 1.21 | |||
| 100 | $ 1.13 | |||
| 250 | $ 1.07 | |||
| 500 | $ 1.03 | |||
| 1000 | $ 0.99 | |||
Description
General part information
2ED2182 Series
650 Vhalf-bridgehigh speed powerMOSFETandIGBTgate driver with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version is also available:2ED21824S06J. Based on ourInfineon's SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Documents
Technical documentation and resources