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2ED2182S06F IS A 650 V 2.5 A HALF-BRIDGE HIGH SPEED POWER MOSFET AND IGBT GATE DRIVER IN A DSO-8 PACKAGE
| Part | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Voltage - Supply [Max] | Voltage - Supply [Min] | High Side Voltage - Max (Bootstrap) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Type | Number of Drivers | Mounting Type | Channel Type | Input Type | Driven Configuration | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-DSO-8-69 | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 10 VDC | 650 V | -40 °C | 125 °C | IGBT N-Channel MOSFET | 1 | Surface Mount | Synchronous | Non-Inverting | Half-Bridge | 2.5 A | 2.5 A | 1.1 V | 1.7 V | 15 ns | 15 ns |