71V3579S80PFGI8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 18 SYNCHRONOUS FLOW-THROUGH SRAM WITH 3.3V I/O

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Documents71V3577_71V3579 Datasheet IDT Suffixes +1

71V3579S80PFGI8

Obsolete

Renesas Electronics Corporation

3.3V 256K X 18 SYNCHRONOUS FLOW-THROUGH SRAM WITH 3.3V I/O

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Documents71V3577_71V3579 Datasheet IDT Suffixes +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V3579S80PFGI8

Access Time	8 ns
Clock Frequency	100 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	256K x 18
Memory Size	4.5 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	100-LQFP
Supplier Device Package	100-TQFP (14x14)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V3579 Series

3.3V 256K x 18 Synchronous Flow-Through SRAM with 3.3V I/O

Part	Memory Organization	Technology	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Memory Size	Supplier Device Package	Memory Format	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Clock Frequency	Access Time
Renesas Electronics Corporation 71V3579S85PFG	256K x 18	SRAM - Synchronous SDR	Volatile	70 °C	0 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	87 MHz
Renesas Electronics Corporation 71V3579S80PFG8	256K x 18	SRAM - Synchronous SDR	Volatile	70 °C	0 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	100 MHz	8 ns
Renesas Electronics Corporation 71V3579S85PFGI	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	87 MHz
Renesas Electronics Corporation 71V3579S75PFGI	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	117 MHz	7.5 ns
Renesas Electronics Corporation 71V3579S75PFG	256K x 18	SRAM - Synchronous SDR	Volatile	70 °C	0 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	117 MHz	7.5 ns
Renesas Electronics Corporation 71V3579S80PFGI	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	100 MHz	8 ns
Renesas Electronics Corporation 71V3579S75PFGI8	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	117 MHz	7.5 ns
Renesas Electronics Corporation 71V3579S80PFGI8	256K x 18	SRAM - Synchronous SDR	Volatile	85 °C	-40 °C	100-LQFP	4.5 Mbit	100-TQFP (14x14)	SRAM	Parallel	3.465 V	3.135 V	Surface Mount	100 MHz	8 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V3579 Series

The 71V3579 3.3V CMOS SRAM is organized as 256K x 18 and contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources

71V3577_71V3579 Datasheet

Datasheet

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Datasheet