
AOB282L
ActiveAlpha & Omega Semiconductor Inc.
MOSFET N-CH 80V 18.5A/105A TO263
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AOB282L
ActiveAlpha & Omega Semiconductor Inc.
MOSFET N-CH 80V 18.5A/105A TO263
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | AOB282L |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.5 A, 105 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 178 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7765 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 272.5 W, 2.1 W |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 800 | $ 1.72 | |
Description
General part information
AOB282 Series
N-Channel 80 V 18.5A (Ta), 105A (Tc) 2.1W (Ta), 272.5W (Tc) Surface Mount TO-263 (D2PAK)
Documents
Technical documentation and resources