MOSFET N-CH 80V 18.5A/105A TO263
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 2.1 W 272.5 W | 7765 pF | 178 nC | 18.5 A 105 A | TO-263 (D2PAK) | 20 V | 3.2 mOhm | -55 °C | 175 ░C | N-Channel | 3.5 V | 6 V 10 V | MOSFET (Metal Oxide) | 80 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount |