RTF010P02TL

NRND

Rohm Semiconductor

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TUMT3, 3 PIN

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NRND

Rohm Semiconductor

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TUMT3, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	RTF010P02TL

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Rds On (Max) @ Id, Vgs	390 mOhm
Supplier Device Package	TUMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)
Rohm Semiconductor RTF010P02TL	2.5 V 4.5 V	MOSFET (Metal Oxide)	2.1 nC	Surface Mount	150 °C	20 V	2 V	1 A	P-Channel	150 pF	390 mOhm	TUMT3	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 1A (Ta) 800mW (Ta) Surface Mount TUMT3

Technical documentation and resources