SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TUMT3, 3 PIN
| Part | Drive Voltage (Max Rds On, Min Rds On) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Operating Temperature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 2.5 V 4.5 V | MOSFET (Metal Oxide) | 2.1 nC | Surface Mount | 150 °C | 20 V | 2 V | 1 A | P-Channel | 150 pF | 390 mOhm | TUMT3 | 12 V |