PJQ4411P_R2_00001

Active

Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

Search across all available documentation for this part.

Active

Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4411P_R2_00001

Current - Continuous Drain (Id) @ 25°C	60 A, 13 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46.8 nC
Input Capacitance (Ciss) (Max) @ Vds	4659 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	60 W, 2 W
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJQ4411P_R2_00001	20 V	P-Channel	MOSFET (Metal Oxide)	13 A 60 A	46.8 nC	Surface Mount	DFN3333-8	1.8 V 4.5 V	4659 pF	2 W 60 W	8-PowerVDFN	1 V	12 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 13A (Ta), 60A (Tc) 2W (Ta), 60W (Tc) Surface Mount DFN3333-8

Technical documentation and resources