Beta
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20V P-CHANNEL ENHANCEMENT MODE M
| Part | Drain to Source Voltage (Vdss) | FET Type | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) @ Id | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 20 V | P-Channel | MOSFET (Metal Oxide) | 13 A 60 A | 46.8 nC | Surface Mount | DFN3333-8 | 1.8 V 4.5 V | 4659 pF | 2 W 60 W | 8-PowerVDFN | 1 V | 12 V | -55 °C | 150 °C |