GD25S512MDYIGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 512MBIT SPI/QUAD 8WSON

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GigaDevice Semiconductor (HK) Limited

IC FLASH 512MBIT SPI/QUAD 8WSON

Technical Specifications

Parameters and characteristics for this part

Specification	GD25S512MDYIGR

Clock Frequency	104 MHz
Memory Format	FLASH
Memory Interface	SPI - Quad I/O
Memory Organization	64 M
Memory Size	64 MB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-WDFN Exposed Pad
Supplier Device Package	8-WSON (6x8)
Technology	FLASH - NOR
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	50 µs
Write Cycle Time - Word, Page [custom]	2.4 ms

Part	Memory Size	Access Time	Clock Frequency	Memory Interface	Mounting Type	Memory Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Memory Organization	Technology	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Supplier Device Package	Memory Format
GigaDevice Semiconductor (HK) Limited GD25S512MDYEGR	64 MB	7 ns	104 MHz	SPI - Quad I/O	Surface Mount	Non-Volatile	-40 °C	125 °C	2.7 V	3.6 V	8-WDFN Exposed Pad	64 M	FLASH - NOR (SLC)	60 µs	2.5 ms	8-WSON (6x8)	FLASH
GigaDevice Semiconductor (HK) Limited GD25S512MDYIGR	64 MB		104 MHz	SPI - Quad I/O	Surface Mount	Non-Volatile	-40 °C	85 °C	2.7 V	3.6 V	8-WDFN Exposed Pad	64 M	FLASH - NOR	50 µs	2.4 ms	8-WSON (6x8)	FLASH
GigaDevice Semiconductor (HK) Limited GD25S512MDBIGY	64 MB		104 MHz	SPI - Quad I/O	Surface Mount	Non-Volatile	-40 °C	85 °C	2.7 V	3.6 V	24-TBGA	64 M	FLASH - NOR	50 µs	2.4 ms	24-TFBGA (6x8)	FLASH

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 104 MHz 8-WSON (6x8)

Technical documentation and resources