GD25S512MDYEGR
ActiveGigaDevice Semiconductor (HK) Limited
IC FLASH 512MBIT SPI/QUAD 8WSON
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GD25S512MDYEGR
ActiveGigaDevice Semiconductor (HK) Limited
IC FLASH 512MBIT SPI/QUAD 8WSON
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GD25S512MDYEGR |
|---|---|
| Access Time | 7 ns |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 64 M |
| Memory Size | 64 MB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (6x8) |
| Technology | FLASH - NOR (SLC) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page [custom] | 60 µs |
| Write Cycle Time - Word, Page [custom] | 2.5 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 5.84 | |
Description
General part information
GD25S512 Series
FLASH - NOR (SLC) Memory IC 512Mbit SPI - Quad I/O 104 MHz 7 ns 8-WSON (6x8)
Documents
Technical documentation and resources