GP3D010A065A

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SemiQ

DIODE SIL CARB 650V 10A TO220-2

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SemiQ

DIODE SIL CARB 650V 10A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D010A065A

Capacitance @ Vr, F	419 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Technology	Package / Case
SemiQ GP3D010A120B	1.65 V	Through Hole	1.2 kV	No Recovery Time	10 A	20 µA	TO-247-2	175 ░C	-55 C	608 pF	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2
SemiQ GP3D010A065A	1.6 V	Through Hole	650 V	No Recovery Time	10 A	25 µA	TO-220-2	175 ░C	-55 C	419 pF	0 ns	SiC (Silicon Carbide) Schottky	TO-220-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 2.33

General part information

Diode 650 V 10A Through Hole TO-220-2

Technical documentation and resources