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DIODE SIL CARB 1.2KV 10A TO247-2
| Part | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ | 1.65 V | Through Hole | 1.2 kV | No Recovery Time | 10 A | 20 µA | TO-247-2 | 175 ░C | -55 C | 608 pF | 0 ns | SiC (Silicon Carbide) Schottky | TO-247-2 |
SemiQ | 1.6 V | Through Hole | 650 V | No Recovery Time | 10 A | 25 µA | TO-220-2 | 175 ░C | -55 C | 419 pF | 0 ns | SiC (Silicon Carbide) Schottky | TO-220-2 |