PJQ5443-AU_R2_000A1

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Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

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Active

Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ5443-AU_R2_000A1

Current - Continuous Drain (Id) @ 25°C	9 A, 50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2767 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	63 W, 2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Technology	Qualification	Grade	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJQ5443-AU_R2_000A1	2.5 V	23 nC	8-PowerVDFN	-55 °C	150 °C	2 W 63 W	2767 pF	40 V	DFN5060-8	12 mOhm	Surface Mount	20 V	MOSFET (Metal Oxide)	AEC-Q101	Automotive	4.5 V 10 V	P-Channel	9 A 50 A
Panjit International Inc. PJQ5443_R2_00001	2.5 V	23 nC	8-PowerVDFN	-55 °C	150 °C	2 W 63 W	2767 pF	40 V	DFN5060-8	12 mOhm	Surface Mount	20 V	MOSFET (Metal Oxide)			4.5 V 10 V	P-Channel	9 A 50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 9A (Ta), 50A (Tc) 2W (Ta), 63W (Tc) Surface Mount DFN5060-8

Technical documentation and resources