Beta
⌘K
40V P-CHANNEL ENHANCEMENT MODE M
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs (Max) | Technology | Qualification | Grade | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 2.5 V | 23 nC | 8-PowerVDFN | -55 °C | 150 °C | 2 W 63 W | 2767 pF | 40 V | DFN5060-8 | 12 mOhm | Surface Mount | 20 V | MOSFET (Metal Oxide) | AEC-Q101 | Automotive | 4.5 V 10 V | P-Channel | 9 A 50 A |
Panjit International Inc. | 2.5 V | 23 nC | 8-PowerVDFN | -55 °C | 150 °C | 2 W 63 W | 2767 pF | 40 V | DFN5060-8 | 12 mOhm | Surface Mount | 20 V | MOSFET (Metal Oxide) | 4.5 V 10 V | P-Channel | 9 A 50 A |